Multiple Cations Interdiffusion in In0.53Ga0.47As/In0.52Al0.48As Quantum Well

Multiple quantum well AlGaAs nanowires.

This letter reports on the growth, structure, and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy pe...

Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors

intersubband photodetectors Daniel Hofstetter, Joab Di Francesco, Denis Martin, Nicolas Grandjean, Yulia Kotsar, and Eva Monroy Institute of Physics, University of Neuchatel, Avenue de Bellevaux 51, 2009 Neuchatel, Switzerland Laboratory of Advanced Semiconductors for Photonics and Electronics, Ecole polytechnique Federale Lausanne, Station 3, 1015 Lausanne, Switzerland INAC/SP2M/NPSC, CEA Gren...

The Effects of Strained Multiple Quantum Well on the Chirped DFB-SOA All Optical Flip-Flop

In this paper, based on the coupled-mode and carrier rate equations, a dynamic model and numerical analysis of a multi quantum well (MQW) chirped distributed feedback semiconductor optical amplifier (DFB-SOA)  all-optical flip-flop is precisely derived. We have analyzed the effects of strains of QW and MQW and cross phase modulation (XPM) on the dynamic response, and rise and fall times of the ...

The effects of interdiffusion on the subbands in GaxIn1ÀxN0.04As0.96 ÕGaAs quantum well for 1.3 and 1.55 mm operation wavelengths

The interdiffusion of GaxIn12xN0.04As0.96 /GaAs single quantum well ~QW! structure with well width of 6 nm is studied theoretically. The as-grown Ga concentration in the QW is chosen to be 0.7 and 0.6 for the operation wavelengths of 1.3 and 1.55 mm, respectively. We studied the effects of interdiffusion on the in-plane strain, confinement potential, and subband energy levels of the QW using Fi...

Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide